创新不是方便的. 它扰乱了. 这需要好奇心、毅力和好奇. 因为创新提出了尖锐的问题. 这首歌献给明天，也献给所有今天成就这一切的人.
Our team of visionaries and trailblazers has redefined innovation — designing and building advanced memory and semiconductor technologies that transform what’s possible.
美光最初是一家四人半导体设计公司，位于博伊西(Boise)的地下室, 爱达荷州的牙科诊所. 美光的第一份合同是为Mostek公司设计64K内存芯片.
虽然不是第一家生产64K 动态随机存取记忆体的公司, 美光的工程师发明了一种新的, 更小的版本被誉为世界上最小的64K 动态随机存取记忆体设计. This innovative design led to high-volume manufacturing of the company’s first 64K product in 1981.
Micron’s 64K 动态随机存取记忆体 was the first product manufactured at the company’s newly completed fabrication facility in Boise, 爱达荷州. 美光将其64K 动态随机存取记忆体销售到首批大量生产的个人电脑中, 包括Commodore 64家用电脑.
除了被介绍为世界上最小的256K 动态随机存取记忆体模具, 该芯片也代表了动态随机存取记忆体密度的行业里程碑. 通过使用更大更容易阅读的存储单元, the 256K 动态随机存取记忆体 was a springboard to future efficiency and profitability for the young memory startup.
密度的里程碑, the 1Mb 动态随机存取记忆体 became a staple for main memory in PCs and graphics cards during the late 1980s and 1990s. Micron’s 1Mb 动态随机存取记忆体 enabled high-capacity SIMM modules that supported PCs equipped with Microsoft’s new Windows OS.
The introductions of 256K video RAM and fast static RAM broadened Micron’s product portfolio beyond traditional 动态随机存取记忆体, 使美光成为不同内存类型的玩家.
密度的里程碑, the 16-megabit 动态随机存取记忆体 replaced Micron's mainstay 4-megabit 动态随机存取记忆体 lineup. 这些容量更高的芯片与微软发布Windows 3的时间一致.这使得PC的最小内存需求达到了1兆字节.
Micron’s demonstration of the Samurai double data rate (DDR) chipset proved that DDR memory could deliver performance equivalent to the competing Direct R动态随机存取记忆体 solution, 但成本要低得多. Ultimately, DDR would become the undisputed industry-standard interface for high-performance 动态随机存取记忆体.
Micron’s innovative quad data rate (QDR) architecture effectively doubled the SRAM bandwidth for communication applications such as switches and routers. 这种独特的设计使用两个端口以双数据速率独立运行, 导致每个时钟周期有四个数据项.
美光的1Gb DDR采用了世界上最先进的工艺技术(110nm), 超过了仍在130纳米技术上的半导体巨头英特尔和AMD. This chip established Micron as the memory industry leader in both density and interface performance.
Micron’s entry into image sensors established the company as an innovator capable of making CMOS technology with image quality rivaling charge coupled device (CCD) sensors. 今天, CMOS传感器是所有类型数码相机的标准, 从智能手机到高端专业装备.
伪静态SRAM (PSRAM)提供了高带宽, 容量和低功耗是替代移动设备中的SRAM所必需的. Micron’s leadership in PSRAM paved the way for future low-power 动态随机存取记忆体 products that are used in mobile devices today.
美光公司开发了一种全新的6F2 电池架构将取代业界的8F2 单元标准，使每个晶圆片大约多25%位. This higher-density design enabled Micron to reclaim the title as the industry’s most cost-competitive memory producer.
Micron’s 16MB 动态随机存取记忆体 — built on a tiny 33mm2 die — enabled higher capacity and lower power in a small footprint. 随着手机从简单的语音到多媒体的转变, LP动态随机存取记忆体需求急剧增加, 这一趋势在智能手机领域延续至今.
This internally-developed tester is used exclusively by Micron to increase 动态随机存取记忆体 test throughput and accuracy. 美光继续发展这个测试平台，以满足新的和未来的内存标准.
Micron’s 16GB DDR2 module served the fast-growing server memory footprint of the 2000s as the rise of virtualization technology packed multiple applications onto single servers. 这些高密度的服务器模块一直延续到今天.
Pitch-doubling was introduced as a lithography technique for increasing bit density without a lithography change. 这种方法涉及将位线分离成第一和第二层金属层, 允许美光公司在现有的50nm技术上提供16Gb的MLC设备.
最初设计用于网络, this high-performance 动态随机存取记忆体 quickly became the solution of choice for an unexpected application: DLP-based TVs and projectors. 而密度随着时间的推移而增加, 减少延迟动态随机存取记忆体仍然是当今网络应用程序的重要组成部分.
这种多级单元(MLC) NAND闪存设备是业界第一个单片32Gb NAND, 在非常小的器件中实现高密度固态存储, 包括数码相机, 个人音乐播放器和数码摄像机.
在推出之时，C300是业界最快的笔记本和台式机SSD. 支持SATA III接口, 这款SSD提供了6gb /s的性能，显著提高了数据传输的吞吐量速度, 应用程序加载和引导时间.
This 128Gb MLC memory could store 1Tb of data in a single fingertip-size package with just eight die, 设置新的存储基准. 另外, this memory was the first to use an innovative planar cell structure that overcame the scaling constraints of standard floating-gate NAND.
Hybrid 内存 Cube (HMC) is a revolutionary 动态随机存取记忆体 architecture that combines high-speed logic with a stack of memory die using through-silicon via (TSV) technology. 从HMC学到的知识将继续应用于未来新兴的内存技术.
该解决方案结合了高性能PCI Express接口和可热插拔2.5英寸的形状因数和定制的微米控制器, 为企业性能可伸缩性和可服务性创建新的选项.
DDR3L-RS存储器开创了“低功耗”动态随机存取记忆体解决方案的新范畴, 为新一代高性能沙巴体育结算平台提供更长的电池寿命, 超薄设备，比如笔记本电脑, 平板电脑, 和Ultrabook系统.
*超级本是英特尔公司或其在美国的子公司的商标.S. 和/或其他国家.
美光的16nm工艺技术在单个模具上提供了16GB的存储空间, 最高密度的平面NAND闪存开发. 使用这种工艺，一个300mm的晶片可以创造近6TB的存储空间.
这种单一组件使单个芯片上的密度显著增加到1 gb. 这种更高的密度使其具有成本效益, 高容量解决方案优化，以支持大规模, 数据密集型工作负载.
3 d与非标志着半导体未来的一个重要转折点. 通过垂直堆叠数据存储单元层, 3 d与非的容量是平面NAND技术的三倍.
3D XPoint代表了几十年来第一个新的内存类别. 这个非易失性存储器的最大值为1,快了000倍，最多是1,耐力是NAND的000倍.
这记忆的创纪录的高, per-pin数据速率使大规模图形性能和GPGPU计算能力. GDDR5X offers up to 14Gb/s data rates, essentially doubling the bandwidth of prior GDDR5 memory.
The creation of the Xcella™ industry consortium helped to accelerate adoption of the Xccela Bus Interface, a new type of high-performance digital interconnect suitable for both volatile and non-volatile memories.
微米®Authenta™技术 helps enable strong cryptographic IoT device identity and health management in flash memory, 为物联网设备软件的最低层提供独特级别的保护, 从引导过程开始.
Micron将其DDR4 nvdimm的密度提高到了32GB, 使以前的解决方案的容量增加一倍. NVDIMMs, also known as persistent memory, can permanently store data in 动态随机存取记忆体 even after a power loss. Micron 32GB NVDIMM-N模块提供高容量和非常快的吞吐量.
Micron began shipments of the industry’s first SSD built on revolutionary quad-level cell (QLC) NAND technology. The Micron®5210 ION SSD provides 33 percent more bit density than triple-level cell (TLC) NAND, 用硬盘驱动器(hdd)对以前的服务进行寻址段.
GDDR6X是世界上最快的离散图形存储解决方案, 这是第一个将系统带宽提高到每秒1tb (TB/s). GDDR6X的多层信号创新打破了传统的带宽限制, clocking record-breaking speeds while accelerating performance on complex graphics workloads across next-generation gaming applications.
全球首个176层3 d与非闪存实现前所未有的成就, 行业领先的密度和性能. 在一起, 美光新的176层技术和先进的架构代表了一个根本性的突破, enabling immense gains in application performance across a range of storage use cases spanning data center, 智能边缘和移动设备.
1α (1-alpha) node 动态随机存取记忆体 products are built using the world’s most advanced 动态随机存取记忆体 process technology and offer major improvements in bit density, 功率和性能. The applications for this new 动态随机存取记忆体 technology are extensive and far reaching — enhancing performance in everything from mobile devices to smart vehicles.
For more than 40 years our innovations have been instrumental to the world’s most significant technology advancements and market transitions. 看看我们最近的一些发明和技术突破.
DDR5, 迄今为止技术最先进的动态随机存取记忆体, will enable the next generation of server workloads by delivering more than an 85% increase in memory performance.
