在接下来的几年里, AI will transition from being limited to deployments by cloud leaders to operationalized by 75% of the world’s businesses. 看到Raj Hazra, senior vice president and general manager Micron Compute and 网络, explain how Micron memory is helping to fuel this tremendous and exciting growth of AI across modern enterprise applications.
Micron delivers the data foundation for powering cloud and enterprise workloads while redefining the memory and storage hierarchy.
Learn how the rise of AI is creating innovation and growth across the data center.
观看视频1 40% improvement in memory density when compared to Micron's previous 1z 动态随机存取记忆体 node.
2 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. 与128层替换门非门相比, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.
3 33% improvement when compared to Micron’s prior two generations of 3 d与非 (96-layer NAND and 128-layer NAND), 哪个选项的最大值是1,200mt /s数据传输速率.
微米的高带宽, low-power memory and storage provide a critical data foundation for the 聪明的边缘.
Learn how digital transformation is driving brilliant new 汽车 features.
观看视频1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. 与128层替换门非门相比, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.
微米的高性能, 高容量, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled mobile devices.
1 15% power savings when compared to the previous 1z generation of Micron mobile 动态随机存取记忆体.
2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.
Micron’s leading-edge memory and storage provide PC users from workstations to ultra-portables with greater performance, 敏捷性和安全性.
Learn about the PC innovations providing new life to the devices we use for working, 学习和玩.
观看视频1 15% power savings when compared to the previous 1z generation of Micron mobile 动态随机存取记忆体.
Micron's 1α node is the world's most advanced 动态随机存取记忆体 process technology, 带来更大的可靠性, 更高的存储密度, improved power savings and best-in-class performance for applications across data center, 汽车, 聪明的边缘, 移动和更多. This technology also provides a solid foundation for future Micron product and memory innovations.
Inside 1α — the World’s Most Advanced 动态随机存取记忆体 Process Technology
市场上技术最先进的NAND节点, Micron's industry-first 176-layer 3 d与非 improves both read latency and write latency by over 35%1 并且提供了15%的混合工作负载性能2, enabling greater application performance across storage use cases spanning data center, 智能边缘和移动设备.
美光推出全球首个176层NAND, Delivering A Breakthrough in Flash 内存 Performance and Density
Micron Transitions to Next-generation 3 d与非 Replacement Gate Technology
1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. 与128层替换门非门相比, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.
2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.
美光公司总裁兼首席执行官, 桑杰Mehrotra, unveiled new memory and storage innovations based on the company's industry-leading 176-layer NAND and 1α (1-alpha) 动态随机存取记忆体 technology, and introduced the industry’s first 普遍的闪存 (UFS) 3.1 .汽车应用解决方案. These newest entrants to Micron’s product portfolio deliver on Micron’s vision of accelerating data-driven insights through innovation.
