微米,
创新繁荣

以世界级的制造业为后盾, Micron is pioneering the world's most advanced 1-alpha (1α) 动态随机存取记忆体 and 176-layer 3 d与非 technologies, enabling businesses around the globe to turn data into insight to gain a competitive edge.
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了解数据如何推动今天的经济.

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Turning process technology leadership to leading products across all markets

Micron delivers the data foundation for powering cloud and enterprise workloads while redefining the memory and storage hierarchy.

  • 1α 动态随机存取记忆体 - 40%更高的存储密度1 for feeding data-hungry workloads and expanding AI deployments
  • 176层3 d与非 - 35%的读写延迟2 加速应用程序性能
  • 176层3 d与非—数据传输速度快33%3 for faster server system bootup and application performance

了解美光数据中心解决方案的更多信息

Learn how the rise of AI is creating innovation and growth across the data center.

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1 40% improvement in memory density when compared to Micron's previous 1z 动态随机存取记忆体 node.

2 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. 与128层替换门非门相比, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

3 33% improvement when compared to Micron’s prior two generations of 3 d与非 (96-layer NAND and 128-layer NAND), 哪个选项的最大值是1,200mt /s数据传输速率.

 

微米的高带宽, low-power memory and storage provide a critical data foundation for the 聪明的边缘.

  • 1α 动态随机存取记忆体 -业界领先的可靠性承诺, 坚固耐用,安全可靠, 汽车和工业解决方案
  • 176层3 d与非 -未来交付1,600 MT/s data transfer rates for near instant-on response times for in-vehicle systems
  • 176-layer 3 d与非 — Future delivery of 35% improved read latency and write latency1 将缓解AI工业边缘设备的瓶颈

了解美光在汽车领域的前沿解决方案

Learn how digital transformation is driving brilliant new 汽车 features.

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1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. 与128层替换门非门相比, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

微米的高性能, 高容量, power-efficient mobile memory and storage provide the data foundation for 5G- and AI-enabled mobile devices.

  • 1α低功耗动态随机存取记忆体 -节省电量15%1, allowing 5G mobile users to perform more tasks without sacrificing battery life
  • 176-layer 3 d与非 — 15% faster mixed workload performance2 用于超高速移动计算, 提高人工智能推理, 和图像丰富, 实时多人游戏
  • 多芯片封装(MCPs)—高性能, 高密度, 低功耗内存和存储在一个单一的紧凑的包, enabling smartphones to handle data-intensive 5G workloads with greater speed and energy efficiency

了解更多美光的移动解决方案

1 15% power savings when compared to the previous 1z generation of Micron mobile 动态随机存取记忆体.

2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.

Micron’s leading-edge memory and storage provide PC users from workstations to ultra-portables with greater performance, 敏捷性和安全性.

  • 1α低功耗动态随机存取记忆体 -节省电量15%1, enabling high-performance computing in small notebook form factors without sacrificing battery life
  • Micron PCIe Gen4 ssd — PCIe Gen4 for data-intensive applications and flexible form factors for cutting-edge designs

了解更多美光的客户解决方案

了解有关美光新客户端ssd的更多信息

Learn about the PC innovations providing new life to the devices we use for working, 学习和玩.

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1 15% power savings when compared to the previous 1z generation of Micron mobile 动态随机存取记忆体.

 

Check out some of Micron's partners discussing how memory and storage collaboration propels customer opportunity

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工业上第一个1α 动态随机存取记忆体技术

Micron's 1α node is the world's most advanced 动态随机存取记忆体 process technology, 带来更大的可靠性, 更高的存储密度, improved power savings and best-in-class performance for applications across data center, 汽车, 聪明的边缘, 移动和更多. This technology also provides a solid foundation for future Micron product and memory innovations.

发现1α技术

美光推出业界首个1α 动态随机存取记忆体技术

Inside 1α — the World’s Most Advanced 动态随机存取记忆体 Process Technology

谈美光公司的1-Alpha 动态随机存取记忆体工艺技术

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突破176 -层技术

市场上技术最先进的NAND节点, Micron's industry-first 176-layer 3 d与非 improves both read latency and write latency by over 35%1 并且提供了15%的混合工作负载性能2, enabling greater application performance across storage use cases spanning data center, 智能边缘和移动设备.

发现176 -层与非

美光推出全球首个176层NAND, Delivering A Breakthrough in Flash 内存 Performance and Density

Micron Transitions to Next-generation 3 d与非 Replacement Gate Technology

1 35% improvement when compared to Micron’s high-volume, floating-gate 96-layer NAND. 与128层替换门非门相比, read latency and write latency for Micron’s 176-layer NAND both improved by over 25%.

2 15% faster mixed workload performance when compared to Micron’s previous generation universal flash storage 3.1-based multichip package using floating-gate 96-layer NAND.

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Micron announces memory and storage innovations at Computex 2021

美光公司总裁兼首席执行官, 桑杰Mehrotra, unveiled new memory and storage innovations based on the company's industry-leading 176-layer NAND and 1α (1-alpha) 动态随机存取记忆体 technology, and introduced the industry’s first 普遍的闪存 (UFS) 3.1 .汽车应用解决方案. These newest entrants to Micron’s product portfolio deliver on Micron’s vision of accelerating data-driven insights through innovation.

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